ARF465B

更新时间： 2024-02-14 05:31:21

品牌	Logo	应用领域
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页数	文件大小	规格书
4页	66K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

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技术参数
数据手册

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ARF465B 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.06	配置：	Single
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	250 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

ARF465B 数据手册

ARF465A

ARF465B

TO-247

Common

Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE

300V 150W 60MHz

The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull

scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.

• Specified300Volt, 40.68MHzCharacteristics:

• Low Cost Common Source RF Package.

•

Output Power = 150 Watts.

Gain = 13dB (Class C)

Efficiency = 75%

• Low Vth thermal coefficient.

• Low Thermal Resistance.

• Optimized SOA for Superior Ruggedness.

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

ARF465A/B

1200

UNIT

V_DSS

V_DGO

I_D

Drain-Source Voltage

Volts

Drain-Gate Voltage

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

Amps

Volts

Watts

°C/W

V_GS

±30

P_D

Total Power Dissipation @ T_C= 25°C

Junction to Case

250

R_θJC

T_J,T_STG

T_L

0.50

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

1200

Volts

V_DS(ON)

On State Drain Voltage (I_D(ON) = 3A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 3A)

I_DSS

µA

250

±100

I_GSS

g_fs

mhos

Volts

V_GS(TH)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

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