ARF461B

更新时间： 2024-02-03 11:21:36

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
4页	101K
描述
N-CHANNEL ENHANCEMENT MODE

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数据手册

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ARF461B 数据手册

ARF461A

ARF461B

TO-247

Common

Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE

250V 150W

65MHz

The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for push-

pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

optimized for both linear and high efficiency classes of operation.

• Specified 250 Volt, 40.68 MHz Characteristics:

• Low Cost Common Source RF Package.

• Low Vth thermal coefficient.

•

Output Power = 150 Watts.

Gain = 13dB (Class AB)

Efficiency = 75% (Class C)

• Low Thermal Resistance.

• Optimized SOA for Superior Ruggedness.

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

ARF461A/B

1000

UNIT

V_DSS

V_DGO

I_D

Drain-Source Voltage

Volts

Drain-Gate Voltage

1000

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

6.5

Amps

Volts

Watts

°C/W

V_GS

±30

P_D

Total Power Dissipation @ T_C= 25°C

Junction to Case

250

R_qJC

T_J,T_STG

T_L

0.50

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

UNIT

Symbol

BV_DSS

MIN

TYP

MAX

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

1000

Volts

V_DS(ON)

On State Drain Voltage (I_D(ON) = 3.25A, V_GS= 10V)

6.5

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 3.25A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

I_DSS

µA

250

±100

I_GSS

g_fs

mhos

Volts

V_GS(TH)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

12 3 4

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与ARF461B相关器件

型号	品牌	获取价格	描述	数据表
ARF461BG	MICROSEMI	获取价格	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
ARF461C	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247,
ARF461CG	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS CO
ARF461DG	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS CO
ARF461PBF	INFINEON	获取价格	Data Line Filter, 1 Function(s), 50V, 5A, LEAD FREE, HERMETIC SEALED, WELDED, CERAMIC PACK
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ARF462A	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE
ARF462B	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE
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