ARF1502

更新时间： 2024-01-01 10:26:25

品牌	Logo	应用领域
ADPOW		晶体晶体管放大器
页数	文件大小	规格书
2页	116K
描述
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

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技术参数
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ARF1502 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Base Number Matches：	1

ARF1502 数据手册

ARF1502

ARF1500

BeO

135-05

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

65V 1500W 40MHz

The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial,

medical and industrial RF power generator and amplifier applications up to 40 MHz.

Specified 65 Volt, 27.12 MHz Characteristics:

High Performance Power RF Package.

Output Power = 900 Watts.

Gain = 17dB (Class C)

Efficiency>75%

Very High Breakdown for Improved Ruggedness.

Low Thermal Resistance.

Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

Symbol Parameter

ARF1500

200

UNIT

Volts

Amps

V_DSS

Drain-Source Voltage

V_DGO

I_D

Drain-Gate Voltage

200

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

V_GS

P_D

±30

Volts

Total Device Dissipation @ T_C= 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

1500

-55 to 200

300

Watts

T_J,T_STG

T_L

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

200

Volts

V_DS

On State Drain Voltage (I_D_(ON)= 35A, V_GS= 10V)

4.0

100

(ON)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 35A)

I_DSS

µA

1000

±400

I_GSS

g_fs

2500

mhos

Volts

V_isolation

RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

V_GS

(TH)

Volts

THERMAL CHARACTERISTICS

Symbol Characteristic (per package unless otherwise noted)

MIN

TYP

MAX

UNIT

R_θJC

R_θCS

Junction to Case

0.12

°C/W

Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)

0.09

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA:

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 5792 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 479761

EUROPE:

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