AR3311P1S
1-Line Low Capacitance Bi-directional TVS Diode
Mechanical Characteristics
Description
Package: DFN1006-2
The AR3311P1S is a bi-directional TVS diode, utilizing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The AR3311P1S has a low capaci-
tance with a typical value at 0.3pF, and complies with the
IEC 61000-4-2 (ESD) with ±30kV air and ±30kV contact
discharge. It is assembled into an ultra-small
1.0x0.6x0.5mm lead-free DFN package. The small size,
low capacitance and high ESD surge protection make
AR3311P1S an ideal choice to protect cell phone, digital
video interfaces and other high speed ports.
Case Material: “Green” Molding Compound.
Terminal Connections: See Diagram Below
Marking Information: See Below
Applications
Cellular Handsets and Accessories
Display Ports
MDDI Ports
USB Ports
Digital Visual Interface (DVI)
Features
PCI Express and Serial SATA Ports
low capacitance: 0.3pF typical
Ultra low leakage: nA level
Operating voltage: 3.3V
Caution:
This Device is designed for signal line protec-
tion only.
Low clamping voltage
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Not intended to be used under bias, not for applica-
tion with a power line.
Contact discharge: ±30kV
– IEC61000-4-5 (Lightning) 5A (8/20μs)
RoHS Compliant
Marking Information
1S
Dimensions and Pin Configuration
Ordering Information
1.0
Part Number
Packaging
10000/Tape & Reel
Reel Size
1
AR3311P1S
7 inch
2
0.5
Circuit and Pin Schematic
Package Dimensions
Revision_1.1
1 of 4
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