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AR1335HSSC11SMAA0-DPBR-E PDF预览

AR1335HSSC11SMAA0-DPBR-E

更新时间: 2024-09-10 21:19:47
品牌 Logo 应用领域
安森美 - ONSEMI 时钟传感器换能器
页数 文件大小 规格书
68页 1601K
描述
IMAGE SENSOR-CMOS

AR1335HSSC11SMAA0-DPBR-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.71
其他特性:MECHANICAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.6 V TO 2.9 V阵列类型:FULL FRAME
主体宽度:10 mm主体高度:1.325 mm
主体长度或直径:10 mm动态范围:69 dB
帧速率:30 fps水平像素:4208
外壳:CERAMIC主时钟:48 MHz
安装特点:SURFACE MOUNT光学格式:1/3.2 inch
输出接口类型:2-WIRE INTERFACE输出类型:DIGITAL VOLTAGE
封装形状/形式:SQUARE像素大小:1.1 µm
传感器/换能器类型:IMAGE SENSOR,CMOS最大供电电压:1.3 V
最小供电电压:1.14 V表面贴装:YES
端接类型:SOLDER垂直像素:3120
Base Number Matches:1

AR1335HSSC11SMAA0-DPBR-E 数据手册

 浏览型号AR1335HSSC11SMAA0-DPBR-E的Datasheet PDF文件第2页浏览型号AR1335HSSC11SMAA0-DPBR-E的Datasheet PDF文件第3页浏览型号AR1335HSSC11SMAA0-DPBR-E的Datasheet PDF文件第4页浏览型号AR1335HSSC11SMAA0-DPBR-E的Datasheet PDF文件第5页浏览型号AR1335HSSC11SMAA0-DPBR-E的Datasheet PDF文件第6页浏览型号AR1335HSSC11SMAA0-DPBR-E的Datasheet PDF文件第7页 
ON Semiconductor Confidential and Proprietary  
Advance  
AR1335HS: 1/3.2-Inch 13Mp CMOS Digital Image Sensor  
Features  
1/3.2-Inch 13 Mp CMOS Digital Image Sensor  
AR1335HS Datasheet, Rev. 0  
For the latest datasheet, please visit www.onsemi.com  
Table 1:  
Key Performance Parameters  
Features  
• High speed sensor supporting 13MP(4:3) at 30fps  
and 1080P up to 90fps  
Parameter  
Value  
Optical format  
Active pixels  
Pixel size  
1/3.2 -inch 13 Mp (4:3)  
4208H x 3120V  
• Advanced 1.1 um pixel BSI technology  
• Data interfaces: two-, three-, and four-lane serial  
mobile industry processor interface (MIPI)  
• Bit-depth compression available for MIPI Interface:  
10-8 and 10-6 to enable lower bandwidth receivers  
for full frame rate applications  
• 3D synchronization controls to enable stereo video  
capture  
• 6.8 kbits one-time programmable memory (OTPM)  
for storing shading correction coefficients and  
module information  
• Programmable controls: gain, horizontal and vertical  
blanking, auto black level offset correction, frame  
size/rate, exposure, left-right and top-bottom image  
reversal, window size, and panning  
• Two on-die phase-locked loop (PLL) oscillators for  
super low noise performance  
1.1 m Back Side Illuminated (BSI)  
11°  
Chief ray angle (CRA)  
Die size  
6.3 mm x 5.7 mm  
6 - 48 MHz  
Input clock frequency  
4-lane MIPI (2- and 3-lane  
supported);  
Max data rate: 1.2Gbps/lane  
Interface  
skip2  
bin2  
skip3  
bin3  
skip4  
bin4  
skip2bin2  
Subsampling modes  
(column and row)  
ADC resolution  
Analog gain  
Digital gain  
10 bits, on-die  
• On-chip temperature sensor  
1x – 7.75x  
• Bayer pattern horizontal down-size scaler  
• Simple two-wire fast-mode+ serial interface  
• Low dark current  
• Interlaced multi-exposure readout enabling High  
Dynamic Range (HDR) still and video applications  
• On-chip lens shading correction  
• Support for external mechanical shutter  
• Support for external LED or Xenon Flash  
• Extended Flash duration up to start of frame readout  
Up to 7.98x  
Scaler  
Adjustable scaling up to 8x  
10-bit, controlled by 2-wire serial I/F  
DPCM: 10-8-10, 10-6-10  
Temperature sensor  
Compression  
Frame rate and exposure  
synchronization  
3D support  
VAA, VAA_PIX 2.6 - 2.9 V (2.7 V nominal)  
VDD_IO,  
VDDIO_ANA  
1.7 - 1.9 V (1.8 V nominal)  
1.14 - 1.3 V (1.2 V nominal)  
Applications  
• Cellular phones  
• Digital still cameras  
• PC cameras  
Supply  
voltage  
VDD,  
VDD_ANA,  
VDD_PLL,  
VDD_PHY  
• PDAs  
• Sports Action Camera  
• Drone  
Power consumption  
Responsivity  
270mW at 60°C (TYP) at 13Mp 30 fps  
4700 e-/lux-sec  
SNRMAX  
37 dB  
Dynamic Range  
69 dB  
Operating Temperature  
Range (at junction) - TJ  
-30°C to +70°C  
AR1335HS/D Rev. 0, 4/16 EN  
1
©Semiconductor Components Industries, LLC 2016,  
‡This document contains information on a new product. Specifications and information herein are subject to change without notice.  

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