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APTM10HM09FT3G PDF预览

APTM10HM09FT3G

更新时间： 2024-11-24 02:51:59
品牌 Logo 应用领域
ADPOW 晶体晶体管
页数 文件大小 规格书
6页 320K
描述
Full - Bridge MOSFET Power Module

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中文翻译

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APTM10HM09FT3G 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.59Is Samacsys：N
Base Number Matches：1

APTM10HM09FT3G 数据手册

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APTM10HM09FT3G  
VDSS = 100V  
RDSon = 9mΩ typ @ Tj = 25°C  
ID = 139A @ Tc = 25°C  
Full - Bridge  
MOSFET Power Module  
Application  
13 14  
•
•
•
•
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
Q3  
18  
19  
11  
10  
22  
23  
7
8
Features  
•
Power MOS V® FREDFETs  
-
-
-
-
Low RDSon  
Q2  
Q4  
32  
Low input and Miller capacitance  
Low gate charge  
4
3
26  
27  
Fast intrinsic diode  
Avalanche energy rated  
Very rugged  
-
-
29  
30  
31  
R1  
•
•
Kelvin source for easy drive  
Very low stray inductance  
15  
16  
-
Symmetrical design  
•
•
Internal thermistor for temperature monitoring  
High level of integration  
28 27 26 25  
23 22  
20 19 18  
29  
30  
16  
15  
Benefits  
•
•
•
•
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
31  
32  
14  
13  
2
3
4
7
8
10 11  
12  
•
•
Low profile  
Each leg can be easily paralleled to achieve a phase  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
leg of twice the current capability  
•
RoHS compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
100  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
V
Tc = 25°C  
139  
ID  
Continuous Drain Current  
A
Tc = 80°C  
100 *  
430  
IDM  
VGS  
RDSon  
PD  
Pulsed Drain current  
Gate - Source Voltage  
±30  
V
mΩ  
W
Drain - Source ON Resistance  
Maximum Power Dissipation  
9.5  
Tc = 25°C  
390  
IAR  
EAR  
EAS  
Avalanche current (repetitive and non repetitive)  
100  
A
Repetitive Avalanche Energy  
50  
mJ  
Single Pulse Avalanche Energy  
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature  
3000  
greater than 30°C for the connectors.  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
APT website – http://www.advancedpower.com  
1 – 6  
123456

中文翻译

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