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APTM100DA18TG-Module PDF预览

APTM100DA18TG-Module

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
7页 423K
描述
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe

APTM100DA18TG-Module 数据手册

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APTM100DA18TG  
VDSS = 1000V  
Boost chopper  
MOSFET Power Module  
RDSon = 180mtyp @ Tj = 25°C  
ID = 43A @ Tc = 25°C  
Application  
NTC2  
VBUS  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
VBUS SENSE  
CR1  
Features  
Power MOS 7® MOSFETs  
-
-
-
-
-
Low RDSon  
Low input and Miller capacitance  
Low gate charge  
Avalanche energy rated  
Very rugged  
OUT  
Q2  
G2  
S2  
Kelvin source for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
0/VBUS  
NTC1  
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
1000  
43  
33  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
172  
±30  
210  
V
m  
W
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation  
Tc = 25°C  
780  
25  
50  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
A
mJ  
3000  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 7  
www.microsemi.com  

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