型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT75TDU60P | ADPOW |
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Triple Dual Common Source Trench + Field Stop IGBT Power Module | |
APTGT75TDU60PG | MICROSEMI |
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Triple Dual Common Source Trench + Field Stop IGBT Power Module | |
APTGT75TDU60PG-Module | MICROCHIP |
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Configuration: Triple Dual common sourceVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75 | |
APTGT75TL60T3G | MICROSEMI |
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Three level inverter Trench + Field Stop IGBT Power Module | |
APTGT75TL60T3G-Module | MICROCHIP |
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Configuration: Three level inverterVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75Silic | |
APTGT75X120BTP3 | ADPOW |
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Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module | |
APTGT75X120BTP3G | MICROSEMI |
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Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MO | |
APTGT75X120E3 | ADPOW |
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3 Phase bridge Trench IGBT Power Module | |
APTGT75X120E3 | MICROSEMI |
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Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
APTGT75X120E3G | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 |