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APTGT75TDU120PG-Module PDF预览

APTGT75TDU120PG-Module

更新时间: 2024-11-06 14:54:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 522K
描述
Configuration: Triple Dual common sourceVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 75Silicon type: TRENCH 3 IGBT Package: SP6P

APTGT75TDU120PG-Module 数据手册

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APTGT75TDU120PG  
Triple Dual Common Source  
Fast Trench + Field Stop IGBT3  
Power Module  
VCES = 1200V  
IC = 75A @ Tc = 80°C  
Application  
AC Switches  
C1  
C3  
C5  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
G1  
G3  
G5  
Features  
E1  
E2  
E3  
E4  
E5  
E6  
Fast Trench + Field Stop IGBT3Technology  
E1/E2  
E3/E4  
E5/E6  
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
G6  
G2  
G4  
C2  
C4  
C6  
Low leakage current  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Benefits  
Stable temperature behavior  
Very rugged  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Very low (12mm) profile  
Each leg can be easily paralleled to achieve a dual  
common source configuration of three times the  
current capability  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
100  
75  
175  
±20  
350  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C  
150A@1150V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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