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APTGT600U170D4G PDF预览

APTGT600U170D4G

更新时间: 2024-11-30 04:49:39
品牌 Logo 应用领域
ADPOW 晶体开关晶体管双极性晶体管
页数 文件大小 规格书
5页 268K
描述
Single switch Trench + Field Stop IGBT Power Module

APTGT600U170D4G 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:NBase Number Matches:1

APTGT600U170D4G 数据手册

 浏览型号APTGT600U170D4G的Datasheet PDF文件第2页浏览型号APTGT600U170D4G的Datasheet PDF文件第3页浏览型号APTGT600U170D4G的Datasheet PDF文件第4页浏览型号APTGT600U170D4G的Datasheet PDF文件第5页 
APTGT600U170D4G  
Single switch  
Trench + Field Stop IGBT®  
Power Module  
VCES = 1700V  
IC = 600A @ Tc = 80°C  
Application  
Welding converters  
1
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
3
5
Features  
Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
2
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Low stray inductance  
High level of integration  
Kelvin emitter for easy drive  
Low stray inductance  
2
1
-
-
M6 connectors for power  
M4 connectors for signal  
4
Benefits  
Stable temperature behavior  
5
3
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1700  
1100  
600  
1200  
±20  
2900  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operation Area  
Tj = 125°C 1200A@1600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  

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