型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT600U120D4G | MICROSEMI |
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Single switch Trench + Field Stop IGBT Power Module | |
APTGT600U120D4G-Module | MICROCHIP |
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Configuration: Single switchVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 600Silicon ty | |
APTGT600U170D4 | MICROSEMI |
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Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel, MODULE-4 | |
APTGT600U170D4 | ADPOW |
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Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel, MODULE-4 | |
APTGT600U170D4G | MICROSEMI |
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Single switch Trench + Field Stop IGBT Power Module | |
APTGT600U170D4G | ADPOW |
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Single switch Trench + Field Stop IGBT Power Module | |
APTGT600U170D4G-Module | MICROCHIP |
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Configuration: Single switchVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 600Silicon type | |
APTGT750U60D4G | MICROSEMI |
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Single switch Trench + Field Stop IGBT Power Module | |
APTGT750U60D4G-Module | MICROCHIP |
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Configuration: Single switchVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 750Silicon typ | |
APTGT75A120D1 | ADPOW |
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Phase leg Trench IGBT Power Module |