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APTGT150DH120G-Module PDF预览

APTGT150DH120G-Module

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 430K
描述
Configuration: Asymmetrical bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 150Silicon type: TRENCH 3 IGBT Package: SP6C

APTGT150DH120G-Module 数据手册

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APTGT150DH120G  
Asymmetrical - Bridge  
Fast Trench + Field Stop IGBT3  
Power Module  
VCES = 1200V  
IC = 150A @ Tc = 80°C  
Application  
VBUS  
Welding converters  
Switched Mode Power Supplies  
Switched Reluctance Motor Drives  
Q1  
G1  
E1  
CR3  
Features  
OUT1 OUT2  
Fast Trench + Field Stop IGBT3 Technology  
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Q4  
G4  
E4  
CR2  
Low leakage current  
RBSOA and SCSOA rated  
0/VBUS  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
Benefits  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
220  
150  
350  
±20  
690  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 300A @ 1150V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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