型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT150DH170 | ADPOW |
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Asymmetrical - Bridge Trench + Field Stop IGBT Power Module | |
APTGT150DH170G | MICROSEMI |
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Asymmetrical - Bridge Trench + Field Stop IGBT Power Module | |
APTGT150DH170G-Module | MICROCHIP |
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Configuration: Asymmetrical bridgeVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 150Silico | |
APTGT150DH60T | MICROSEMI |
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Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, MODULE-14 | |
APTGT150DH60TG | MICROSEMI |
获取价格 |
Asymmetrical - Bridge Trench + Field Stop IGBT Power Module | |
APTGT150DH60TG-Module | MICROCHIP |
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Configuration: Asymmetrical bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 150Silic | |
APTGT150DU120 | ADPOW |
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Dual common source Fast Trench + Field Stop IGBT Power Module | |
APTGT150DU120G | MICROSEMI |
获取价格 |
Dual common source Fast Trench + Field Stop IGBT Power Module | |
APTGT150DU120G-Module | MICROCHIP |
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Configuration: Dual common sourceVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 150Silic | |
APTGT150DU120T | ADPOW |
获取价格 |
Dual common source Fast Trench + Field Stop IGBT Power Module |