5秒后页面跳转
APTGT100DH120TG PDF预览

APTGT100DH120TG

更新时间: 2024-11-24 03:27:51
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
5页 283K
描述
Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module

APTGT100DH120TG 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-XUFM-X14Reach Compliance Code:unknown
风险等级:5.68Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):140 A
集电极-发射极最大电压:1200 V配置:PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码:R-XUFM-X14元件数量:2
端子数量:14封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):610 ns
标称接通时间 (ton):340 nsBase Number Matches:1

APTGT100DH120TG 数据手册

 浏览型号APTGT100DH120TG的Datasheet PDF文件第2页浏览型号APTGT100DH120TG的Datasheet PDF文件第3页浏览型号APTGT100DH120TG的Datasheet PDF文件第4页浏览型号APTGT100DH120TG的Datasheet PDF文件第5页 
APTGT100DH120TG  
Asymmetrical - Bridge  
Fast Trench + Field Stop IGBT®  
Power Module  
VCES = 1200V  
IC = 100A @ Tc = 80°C  
Application  
VBUS  
Welding converters  
VBUS SENSE  
Switched Mode Power Supplies  
Switched Reluctance Motor Drives  
Q1  
G1  
CR3  
Features  
Fast Trench + Field Stop IGBT® Technology  
E1  
-
-
-
-
-
-
-
-
Low voltage drop  
OUT1  
OUT2  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Q4  
G4  
E4  
CR2  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS SENSE  
Kelvin emitter for easy drive  
Very low stray inductance  
NTC1  
NTC2  
0/VBUS  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Internal thermistor for temperature monitoring  
Benefits  
G4  
E4  
VBUS  
OUT2  
OUT1  
Stable temperature behavior  
Very rugged  
SENSE  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
0/VBUS  
VBUS  
E1  
NTC2  
NTC1  
0/VBUS  
SENSE  
G1  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
140  
100  
200  
±20  
480  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 200A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  

与APTGT100DH120TG相关器件

型号 品牌 获取价格 描述 数据表
APTGT100DH120TG-Module MICROCHIP

获取价格

Configuration: Asymmetrical bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 100Sili
APTGT100DH170 ADPOW

获取价格

Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT100DH170 MICROSEMI

获取价格

Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-8
APTGT100DH170G MICROSEMI

获取价格

Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT100DH60T3G MICROSEMI

获取价格

Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT100DH60TG MICROSEMI

获取价格

Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT100DH60TG-Module MICROCHIP

获取价格

Configuration: Asymmetrical bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 100Silic
APTGT100DSK60T3 ADPOW

获取价格

Dual Buck chopper Trench + Field Stop IGBT Power Module
APTGT100DSK60T3G MICROSEMI

获取价格

Dual Buck chopper Trench + Field Stop IGBT Power Module
APTGT100DU120T ADPOW

获取价格

Dual common source Fast Trench + Field Stop IGBT Power Module