是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-XUFM-X14 | Reach Compliance Code: | unknown |
风险等级: | 5.68 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 140 A |
集电极-发射极最大电压: | 1200 V | 配置: | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X14 | 元件数量: | 2 |
端子数量: | 14 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 610 ns |
标称接通时间 (ton): | 340 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT100DH120TG-Module | MICROCHIP |
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Configuration: Asymmetrical bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 100Sili | |
APTGT100DH170 | ADPOW |
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Asymmetrical - Bridge Trench + Field Stop IGBT Power Module | |
APTGT100DH170 | MICROSEMI |
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Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-8 | |
APTGT100DH170G | MICROSEMI |
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Asymmetrical - Bridge Trench + Field Stop IGBT Power Module | |
APTGT100DH60T3G | MICROSEMI |
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Asymmetrical - Bridge Trench + Field Stop IGBT Power Module | |
APTGT100DH60TG | MICROSEMI |
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Asymmetrical - Bridge Trench + Field Stop IGBT Power Module | |
APTGT100DH60TG-Module | MICROCHIP |
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Configuration: Asymmetrical bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 100Silic | |
APTGT100DSK60T3 | ADPOW |
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Dual Buck chopper Trench + Field Stop IGBT Power Module | |
APTGT100DSK60T3G | MICROSEMI |
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Dual Buck chopper Trench + Field Stop IGBT Power Module | |
APTGT100DU120T | ADPOW |
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Dual common source Fast Trench + Field Stop IGBT Power Module |