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APTGF50H60T3G PDF预览

APTGF50H60T3G

更新时间: 2024-11-21 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
6页 294K
描述
Full - Bridge NPT IGBT Power Module

APTGF50H60T3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X25针数:25
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7外壳连接:ISOLATED
最大集电极电流 (IC):65 A集电极-发射极最大电压:600 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X25JESD-609代码:e1
湿度敏感等级:1元件数量:4
端子数量:25最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):151 ns
标称接通时间 (ton):52 nsVCEsat-Max:2.45 V
Base Number Matches:1

APTGF50H60T3G 数据手册

 浏览型号APTGF50H60T3G的Datasheet PDF文件第2页浏览型号APTGF50H60T3G的Datasheet PDF文件第3页浏览型号APTGF50H60T3G的Datasheet PDF文件第4页浏览型号APTGF50H60T3G的Datasheet PDF文件第5页浏览型号APTGF50H60T3G的Datasheet PDF文件第6页 
APTGF50H60T3G  
VCES = 600V  
Full - Bridge  
IC = 50A @ Tc = 80°C  
NPT IGBT Power Module  
Application  
13 14  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
Q3  
CR1  
22  
CR3  
11  
10  
18  
19  
Features  
Non Punch Through (NPT) Fast IGBT®  
7
8
-
-
-
-
-
-
-
-
Low voltage drop  
23  
Low tail current  
Q2  
29  
Q4  
Switching frequency up to 50 kHz  
Soft recovery parallel diodes  
Low diode VF  
CR2  
CR4  
26  
27  
4
3
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Symmetrical design  
30  
31  
32  
-
15  
16  
R1  
Kelvin emitter for easy drive  
Very low stray inductance  
High level of integration  
Internal thermistor for temperature monitoring  
28 27 26 25  
23 22  
20 19 18  
29  
30  
16  
Benefits  
15  
Outstanding performance at high frequency  
operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal  
for easy PCB mounting  
31  
32  
14  
13  
2
3
4
7
8
10 11  
12  
Low profile  
Easy paralleling due to positive TC of VCEsat  
Each leg can be easily paralleled to achieve a  
phase leg of twice the current capability  
RoHS compliant  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
65  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
50  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
230  
±20  
250  
V
W
TC = 25°C  
Tj = 125°C  
RBSOA Reverse Bias Safe Operating Area  
100A @ 500V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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