生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-XUFM-X7 |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 460 A | 集电极-发射极最大电压: | 600 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 325 ns | 标称接通时间 (ton): | 230 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGF330A60D3G | MICROSEMI |
获取价格 |
Phase leg NPT IGBT Power Module | |
APTGF330SK60D3 | ADPOW |
获取价格 |
Buck chopper NPT IGBT Power Module | |
APTGF330SK60D3G | MICROSEMI |
获取价格 |
Buck Chopper NPT IGBT Power Module | |
APTGF350A60 | ADPOW |
获取价格 |
Phase leg NPT IGBT Power Module | |
APTGF350A60G | MICROSEMI |
获取价格 |
Phase leg NPT IGBT Power Module | |
APTGF350DA60 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-5 | |
APTGF350DA60G | MICROSEMI |
获取价格 |
Boost chopper NPT IGBT Power Module | |
APTGF350DU60 | ADPOW |
获取价格 |
Dual common source NPT IGBT Power Module | |
APTGF350DU60G | MICROSEMI |
获取价格 |
Dual common source NPT IGBT Power Module | |
APTGF350SK60 | ADPOW |
获取价格 |
Buck chopper NPT IGBT Power Module |