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APTGF30X60RTP2G PDF预览

APTGF30X60RTP2G

更新时间: 2024-11-21 20:10:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网电动机控制瞄准线晶体管
页数 文件大小 规格书
4页 241K
描述
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-24

APTGF30X60RTP2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X24针数:24
Reach Compliance Code:compliant风险等级:5.64
其他特性:LOW CONDUCTION LOSS外壳连接:ISOLATED
最大集电极电流 (IC):25 A集电极-发射极最大电压:600 V
配置:COMPLEXJESD-30 代码:R-XUFM-X24
JESD-609代码:e1湿度敏感等级:1
元件数量:7端子数量:24
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):310 ns标称接通时间 (ton):100 ns
Base Number Matches:1

APTGF30X60RTP2G 数据手册

 浏览型号APTGF30X60RTP2G的Datasheet PDF文件第2页浏览型号APTGF30X60RTP2G的Datasheet PDF文件第3页浏览型号APTGF30X60RTP2G的Datasheet PDF文件第4页 
APTGF30X60RTP2  
APTGF30X60BTP2  
Input rectifier bridge +  
Brake + 3 Phase Bridge  
NPT IGBT Power Module  
VCES = 600V  
IC = 30A @ Tc = 80°C  
Application  
Features  
AC Motor control  
Non Punch Through (NPT) Fast IGBT®  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 50 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Very low stray inductance  
High level of integration  
Internal thermistor for temperature monitoring  
Benefits  
APTGF30X60RTP2: Without Brake (Pin 7 & 14 not connected)  
Low conduction losses  
Stable temperature behavior  
Very rugged  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
14  
20 19 18 17 16 15  
13 12 11 10  
21  
22  
9
8
7
23  
24  
1
2
3
4
5
6
All ratings @ Tj = 25°C unless otherwise specified  
1. Absolute maximum ratings  
Diode rectifier Absolute maximum ratings  
Symbol  
VRRM  
ID  
Parameter  
Max ratings  
1600  
Unit  
V
Repetitive Peak Reverse Voltage  
DC Forward Current  
TC = 80°C  
Tj = 25°C  
Tj = 150°C  
30  
300  
230  
A
IFSM  
Surge Forward Current  
tp = 10ms  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 4  
APT website – http://www.advancedpower.com  

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