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APTC80TA15P PDF预览

APTC80TA15P

更新时间： 2024-11-27 04:06:39
品牌 Logo 应用领域
ADPOW 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 332K
描述
Triple phase leg Super Junction MOSFET Power Module

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中文翻译

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APTC80TA15P 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-XUFM-X21
Reach Compliance Code：unknown风险等级：5.64
Is Samacsys：N其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：670 mJ外壳连接：ISOLATED
配置：3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：800 V
最大漏极电流 (ID)：28 A最大漏源导通电阻：0.15 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XUFM-X21
元件数量：6端子数量：21
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：110 A
认证状态：Not Qualified表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

APTC80TA15P 数据手册

 浏览型号APTC80TA15P的Datasheet PDF文件第2页浏览型号APTC80TA15P的Datasheet PDF文件第3页浏览型号APTC80TA15P的Datasheet PDF文件第4页浏览型号APTC80TA15P的Datasheet PDF文件第5页浏览型号APTC80TA15P的Datasheet PDF文件第6页 
APTC80TA15P  
Triple phase leg  
Super Junction MOSFET  
Power Module  
VDSS = 800V  
RDSon = 150mΩ max @ Tj = 25°C  
ID = 28A @ Tc = 25°C  
Application  
VBUS1  
VBUS2  
VBUS3  
•
•
•
•
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
G1  
S1  
G3  
S3  
G5  
S5  
U
V
W
Features  
•
G2  
S2  
G4  
G6  
-
-
-
-
-
Ultra low RDSon  
S4  
S6  
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
Very rugged  
0/VBUS1  
0/VBUS2  
0/VBUS3  
•
•
Kelvin source for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
•
High level of integration  
Benefits  
•
•
•
•
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
VBUS 1  
VBUS 2  
VBUS 3  
G1  
G3  
S3  
G5  
S5  
S1  
0/VBUS 1  
0/VBUS 2  
0/VBUS 3  
S2  
G2  
S4  
G4  
S6  
G6  
•
•
Very low (12mm) profile  
Each leg can be easily paralleled to achieve a phase  
leg of three times the current capability  
Module can be configured as a three phase bridge  
Module can be configured as a boost followed by a  
full bridge  
U
V
W
•
•
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
800  
V
Tc = 25°C  
28  
21  
110  
±30  
150  
277  
24  
0.5  
670  
ID  
Continuous Drain Current  
A
Tc = 80°C  
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
V
mΩ  
W
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation  
Tc = 25°C  
Avalanche current (repetitive and non repetitive)  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 6  
APT website – http://www.advancedpower.com  
123456

中文翻译

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