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APTC80H29SCT PDF预览

APTC80H29SCT

更新时间： 2024-11-29 08:33:35
品牌 Logo 应用领域
ADPOW 晶体二极管晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 320K
描述
Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

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中文翻译

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APTC80H29SCT 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-XUFM-X14
Reach Compliance Code：unknown风险等级：5.64
Is Samacsys：N雪崩能效等级（Eas）：670 mJ
外壳连接：ISOLATED配置：BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
最小漏源击穿电压：800 V最大漏极电流 (ID)：15 A
最大漏源导通电阻：0.29 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XUFM-X14元件数量：4
端子数量：14工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：60 A认证状态：Not Qualified
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

APTC80H29SCT 数据手册

 浏览型号APTC80H29SCT的Datasheet PDF文件第2页浏览型号APTC80H29SCT的Datasheet PDF文件第3页浏览型号APTC80H29SCT的Datasheet PDF文件第4页浏览型号APTC80H29SCT的Datasheet PDF文件第5页浏览型号APTC80H29SCT的Datasheet PDF文件第6页浏览型号APTC80H29SCT的Datasheet PDF文件第7页 
APTC80H29SCT  
Full - Bridge  
Series & SiC parallel diodes  
Super Junction  
VDSS = 800V  
RDSon = 290mꢀ max @ Tj = 25°C  
ID = 15A @ Tc = 25°C  
MOSFET Power Module  
Application  
Sꢁ Motor control  
VBUS  
Sꢁ Switched Mode Power Supplies  
Sꢁ Uninterruptible Power Supplies  
CR1A  
CR3A  
CR1B CR3B  
OUT1 OUT2  
Features  
Sꢁ  
Q1  
Q3  
G3  
S3  
G1  
S1  
-
-
-
-
Ultra low RDSon  
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
CR2A  
CR4A  
CR2B CR4B  
Q2  
Q4  
Sꢁ Parallel SiC Schottky Diode  
G4  
S4  
G2  
S2  
-
-
-
-
Zero reverse recovery  
Zero forward recovery  
0/VBUS  
NTC1  
NTC2  
Temperature Independent switching behavior  
Positive temperature coefficient on VF  
Sꢁ Kelvin source for easy drive  
Sꢁ Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
Sꢁ Internal thermistor for temperature monitoring  
Sꢁ High level of integration  
G3  
S3  
G4  
S4  
OUT2  
OUT1  
Benefits  
VBUS  
0/VBUS  
Sꢁ Outstanding performance at high frequency operation  
Sꢁ Direct mounting to heatsink (isolated package)  
Sꢁ Low junction to case thermal resistance  
Sꢁ Solderable terminals both for power and signal for  
easy PCB mounting  
S1  
G1  
S2  
G2  
NTC2  
NTC1  
Sꢁ Low profile  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
Continuous Drain Current  
800  
15  
V
Tc = 25°C  
Tc = 80°C  
ID  
A
11  
IDM  
VGS  
RDSon  
PD  
IAR  
EAR  
EAS  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
60  
±30  
V
mꢀ  
W
290  
Maximum Power Dissipation  
Tc = 25°C  
156  
24  
0.5  
670  
Avalanche current (repetitive and non repetitive)  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 – 7  
APT website – http://www.advancedpower.com  
1234567

中文翻译

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