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APT84F50B2 PDF预览

APT84F50B2

更新时间: 2024-11-06 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 320K
描述
N-Channel FREDFET

APT84F50B2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.7其他特性:AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas):1845 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):84 A最大漏极电流 (ID):84 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):185 pFJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:1135 W最大功率耗散 (Abs):1135 W
最大脉冲漏极电流 (IDM):270 A认证状态:Not Qualified
表面贴装:NO端子面层:PURE MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):155 ns最大开启时间(吨):60 ns
Base Number Matches:1

APT84F50B2 数据手册

 浏览型号APT84F50B2的Datasheet PDF文件第2页浏览型号APT84F50B2的Datasheet PDF文件第3页浏览型号APT84F50B2的Datasheet PDF文件第4页 
APT84F50B2  
APT84F50L  
500V,ꢀ84A,ꢀ0.065ꢀMax,ꢀt 320ns  
rr  
N-Channel FREDFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
T-MaxTM  
TO-264  
A proprietary planar stripe design yields excellent reliability and manufacturability. Low  
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-  
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control slew rates during switching, resulting in low EMI and reliable paralleling,  
even when switching at very high frequency. Reliability in flyback, boost, forward, and  
other circuits is enhanced by the high avalanche energy capability.  
APT84F50B2  
APT84F50L  
G
D
S
Single die FREDFET  
FEATURES  
TYPICAL APPLICATIONS  
•ꢀꢀFastꢀswitchingꢀwithꢀlowꢀEMI  
•ꢀ ZVSꢀphaseꢀshiftedꢀandꢀotherꢀfullꢀbridge  
ꢀ •ꢀꢀLowꢀt ꢀforꢀhighꢀreliability  
rr  
•ꢀꢀHalfꢀbridge  
ꢀ •ꢀꢀUltraꢀlowꢀC ꢀforꢀimprovedꢀnoiseꢀimmunity  
•ꢀꢀPFCꢀandꢀotherꢀboostꢀconverter  
•ꢀ Buckꢀconverter  
rss  
ꢀ •ꢀꢀLowꢀgateꢀcharge  
ꢀ •ꢀꢀAvalancheꢀenergyꢀrated  
•ꢀꢀRoHSꢀcompliant  
•ꢀꢀSingleꢀandꢀtwoꢀswitchꢀforward  
•ꢀꢀFlyback  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
Continuous Drain Current @ TC = 25°C  
ID  
84  
53  
Continuous Drain Current @ TC = 100°C  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
270  
30  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
1845  
42  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
1135  
0.11  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
0.11  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
150  
300  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 10 Seconds (1.6mm from case)  
oz  
g
0.22  
6.2  
WT  
Package Weight  
in·lbf  
N·m  
10  
Torque  
Mounting Torque ( TO-264 Package), 4-40 or M3 screw  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

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