Datasheet > APT80SM120B

APT80SM120B

更新时间： 2024-11-06 14:47:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	390K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

APT80SM120B 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.82
Base Number Matches：	1

APT80SM120B 数据手册

PRELIMINARY

APT80SM120B

1200V, 80A, 40mΩ

Package

APT80SM120B

Silicon Carbide N-Channel Power MOSFET

DESCRIPTION

Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over

silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage

applications.

FEATURES / TYPICAL APPLICATIONS

SiC MOSFET Features:

Applications:

SiC MOSFET Beneﬁts:

• Low capacitances and low gate charge

• PV inverter, converter and industrial motor

drives

•ꢀ Highꢀeﬃciencyꢀtoꢀenableꢀlighter/compactꢀꢀ

system

• Fast switching speed due to low internal

gate resistance (ESR)

• Smart grid transmission & distribution

• Induction heating, and welding

• H/EV powertrain and EV charger

• Power supply and distribution

• Simple to drive and easy to parallel

• Stable operation at high junction

temperature, Tj(max) = +175C

• Improved thermal capabilities and lower

switching losses

• Fast and reliable body diode

• Eliminates the need of external Free

Wheeling Diode

• Superior avalanche ruggedness

• Lower system cost of ownership

MAXIMUM RATINGS

Symbol

Parameter

Ratings

Unit

V_DSS

Drain Source Voltage

1200

Continuous Drain Current @ T_C= 25°C

Continuous Drain Current @ T_C= 100°C

I_D

I_DM

Pulsed Drain Current

190

V_GS

Gate-Source Voltage

-10 to +25

555

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

P_D

3.7

W/°C

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

0.27

175

150

260

Unit

Junction to Case Thermal Resistance

Operating Junction Temperature

0.23

°C/W

R_θ

-55

T_j

T_stg

T_L

Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

°C

in·lbf

N·m

Torque

Mounting Torque (TO-247 Package), 6-32 or M3 screw

1.1

050-7715 Rev B 11/2016

12 3 4 5 6

中文翻译

下载PDF

与APT80SM120B相关器件

型号	品牌	获取价格	描述	数据表
APT81H50B2	MICROSEMI	获取价格	Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Met
APT81H50L	MICROSEMI	获取价格	Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Met
APT-8255	AGILENT	获取价格	Wide Band Medium Power Amplifier, 2000MHz Min, 8000MHz Max,
APT-8255R	AGILENT	获取价格	2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
APT8256	APLUS	获取价格	Analog Circuit
APT-8266	AGILENT	获取价格	2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
APT-8266R	AGILENT	获取价格	2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
APT83GU30B	ADPOW	获取价格	POWER MOS 7 IGBT
APT83GU30B	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247,
APT83GU30BG	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247,