Datasheet > 晶体管 > IGBT> APT80GA90S

APT80GA90S

更新时间： 2024-11-21 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
6页	215K
描述
High Speed PT IGBT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APT80GA90S 数据手册

APT80GA90B

APT80GA90S

900V

High Speed PT IGBT

POWER MOS 8^®is a high speed Punch-Through switch-mode IGBT. Low E_offis achieved

APT80GA90S

through leading technology silicon design and lifetime control processes. A reduced E_off

D³PAK

V_CE(ON)tradeoff results in superior efﬁciency compared to other IGBT technologies. Low

gate charge and a greatly reduced ratio of C_res/C_iesprovide excellent noise immunity, short

delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the

poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even

when switching at high frequency.

APT80GA90B

Single die IGBT

FEATURES

TYPICAL APPLICATIONS

• Fast switching with low EMI

• Very Low E_offfor maximum efﬁciency

• Ultra low C_resfor improved noise immunity

• Low conduction loss

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• Low gate charge

• UPS, solar, and other inverters

• High frequency, high efﬁciency industrial

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter

Ratings

Unit

Collector Emitter Voltage

900

V_ces

I_C1

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 100°C

Pulsed Collector Current ¹

145

I_C2

I_CM

239

V_GE

Gate-Emitter Voltage ²

±30

P_D

Total Power Dissipation @ T_C= 25°C

Switching Safe Operating Area @ T_J= 150°C

Operating and Storage Junction Temperature Range

625

SSOA

T_J, T_STG

T_L

239A @ 900V

-55 to 150

°C

Lead Temperature for Soldering: 0.063" from Case for 10 Seconds

300

Static Characteristics

Symbol Parameter

T = 25°C unless otherwise speciﬁed

Test Conditions

Min

Typ

Max

Unit

V_BR(CES)

Collector-Emitter Breakdown Voltage

V_GE= 0V, I_C= 1.0mA

900

T_J= 25°C

T_J= 125°C

2.5

2.2

4.5

3.1

V_GE= 15V,

I_C= 47A

V_CE(on)

V_GE(th)

I_CES

Collector-Emitter On Voltage

Gate Emitter Threshold Voltage

Zero Gate Voltage Collector Current

Gate-Emitter Leakage Current

V_GE=V_CE, I_C= 1mA

T_J= 25°C

250

V_CE= 900V,

μA

_GE= 0V

T_J= 125°C

1000

±100

I_GES

V_GS= ±30V

Thermal and Mechanical Characteristics

Symbol Characteristic

Min

Typ

Max

0.2

Unit

°C/W

R_θJC

W_T

Junction to Case Thermal Resistance

Package Weight

5.9

Torque

Mounting Torque (TO-247 Package), 4-40 or M3 screw

in·lbf

Microsemi Website - http://www.microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与APT80GA90S相关器件

型号	品牌	获取价格	描述	数据表
APT80GP60B2	ADPOW	获取价格	POWER MOS 7 IGBT
APT80GP60B2	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, B2, TMAX-3
APT80GP60J	ADPOW	获取价格	POWER MOS 7 IGBT
APT80GP60JD3	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 68A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
APT80GP60JDF3	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 151A I(C), 600V V(BR)CES
APT80GP60JDQ3	ADPOW	获取价格	POWER MOS 7 IGBT
APT80M60J	MICROSEMI	获取价格	N-Channel MOSFET
APT80M60J_09	MICROSEMI	获取价格	N-Channel MOSFET
APT80SM120B	MICROSEMI	获取价格	Power Field-Effect Transistor,
APT81H50B2	MICROSEMI	获取价格	Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Met

与APT80GA90S相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

APT80GA90S

APT80GA90S 数据手册

与APT80GA90S相关器件

与APT80GA90S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

APT80GA90S

APT80GA90S 数据手册

与APT80GA90S相关器件

与APT80GA90S相关文章

您还可以找

您在本页遇到什么问题？