是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-264AA |
包装说明: | ROHS COMPLIANT, TO-264, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 2.24 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 143 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JEDEC-95代码: | TO-264AA | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 326 ns |
标称接通时间 (ton): | 52 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT80GA60S | MICROSEMI |
获取价格 |
High Speed PT IGBT | |
APT80GA90B | MICROSEMI |
获取价格 |
High Speed PT IGBT | |
APT80GA90B2D40 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 145A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COM | |
APT80GA90LD40 | MICROSEMI |
获取价格 |
High Speed PT IGBT | |
APT80GA90S | MICROSEMI |
获取价格 |
High Speed PT IGBT | |
APT80GP60B2 | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT80GP60B2 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, B2, TMAX-3 | |
APT80GP60J | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT80GP60JD3 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 68A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 | |
APT80GP60JDF3 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 151A I(C), 600V V(BR)CES |