Datasheet > APT80GA60B

APT80GA60B

更新时间： 2024-11-21 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
6页	213K
描述
High Speed PT IGBT

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中文翻译

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数据手册

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APT80GA60B 数据手册

APT80GA60B

APT80GA60S

600V

High Speed PT IGBT

APT80GA60B

POWER MOS 8^®is a high speed Punch-Through switch-mode IGBT. Low E_offis achieved

D³PAK

through leading technology silicon design and lifetime control processes. A reduced E_off

V_CE(ON)tradeoff results in superior efﬁciency compared to other IGBT technologies. Low

gate charge and a greatly reduced ratio of C_res/C_iesprovide excellent noise immunity, short

delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the

poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even

when switching at high frequency.

APT80GA60S

Single die IGBT

FEATURES

TYPICAL APPLICATIONS

• Fast switching with low EMI

• Very Low E_offfor maximum efﬁciency

• Ultra low C_resfor improved noise immunity

• Low conduction loss

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• Low gate charge

• UPS, solar, and other inverters

• High frequency, high efﬁciency industrial

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter

Ratings

Unit

Collector Emitter Voltage

600

V_ces

I_C1

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 100°C

Pulsed Collector Current ¹

143

I_C2

I_CM

240

V_GE

Gate-Emitter Voltage ²

±30

P_D

Total Power Dissipation @ T_C= 25°C

Switching Safe Operating Area @ T_J= 150°C

Operating and Storage Junction Temperature Range

625

SSOA

T_J, T_STG

T_L

240A @ 600V

-55 to 150

°C

Lead Temperature for Soldering: 0.063" from Case for 10 Seconds

300

Static Characteristics

Symbol Parameter

T = 25°C unless otherwise speciﬁed

Test Conditions

Min

Typ

Max

Unit

V_BR(CES)

Collector-Emitter Breakdown Voltage

V_GE= 0V, I_C= 1.0mA

600

T_J= 25°C

T_J= 125°C

2.0

1.9

4.5

2.5

V_GE= 15V,

I_C= 47A

V_CE(on)

V_GE(th)

I_CES

Collector-Emitter On Voltage

Gate Emitter Threshold Voltage

Zero Gate Voltage Collector Current

Gate-Emitter Leakage Current

V_GE=V_CE, I_C= 1mA

T_J= 25°C

250

_CE= 600V,

μA

V_GE= 0V

T_J= 125°C

1000

±100

I_GES

V_GS= ±30V

Thermal and Mechanical Characteristics

Symbol Characteristic

Min

Typ

Max

0.2

Unit

°C/W

R_θJC

W_T

Junction to Case Thermal Resistance

Package Weight

5.9

Torque

Mounting Torque (TO-247 Package), 4-40 or M3 screw

in·lbf

Microsemi Website - http://www.microsemi.com

12 3 4 5 6

中文翻译

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与APT80GA60B相关器件

型号	品牌	获取价格	描述	数据表
APT80GA60LD40	MICROSEMI	获取价格	High Speed PT IGBT
APT80GA60S	MICROSEMI	获取价格	High Speed PT IGBT
APT80GA90B	MICROSEMI	获取价格	High Speed PT IGBT
APT80GA90B2D40	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 145A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COM
APT80GA90LD40	MICROSEMI	获取价格	High Speed PT IGBT
APT80GA90S	MICROSEMI	获取价格	High Speed PT IGBT
APT80GP60B2	ADPOW	获取价格	POWER MOS 7 IGBT
APT80GP60B2	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, B2, TMAX-3
APT80GP60J	ADPOW	获取价格	POWER MOS 7 IGBT
APT80GP60JD3	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 68A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

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