生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 1210 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.9 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 310 W |
最大脉冲漏极电流 (IDM): | 48 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT8090BNR-GULLWING | ADPOW |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Meta | |
APT8090CN | ADPOW |
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Transistor | |
APT8090DN | ADPOW |
获取价格 |
Transistor | |
APT8090HN | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10.5A I(D) | TO-258ISO | |
APT80F60J | MICROSEMI |
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N-Channel FREDFET | |
APT80F60J_11 | MICROSEMI |
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N-Channel FREDFET | |
APT80GA60B | MICROSEMI |
获取价格 |
High Speed PT IGBT | |
APT80GA60LD40 | MICROSEMI |
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High Speed PT IGBT | |
APT80GA60S | MICROSEMI |
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High Speed PT IGBT | |
APT80GA90B | MICROSEMI |
获取价格 |
High Speed PT IGBT |