APT8075

更新时间： 2024-09-12 22:50:11

品牌	Logo	应用领域
ADPOW		高压高电压电源
页数	文件大小	规格书
4页	54K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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数据手册

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APT8075 数据手册

TO-247

APT8075BN 800V 13.0A 0.75Ω

APT8090BN 800V 12.0A 0.90Ω

POWER MOS IV^®

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

APT

Symbol Parameter

8075BN

8090BN

UNIT

V_DSS

800

Volts

Drain-Source Voltage

I_D

Continuous Drain Current @ T_C= 25°C

Amps

I_DM

V_GS

Pulsed Drain Current

Gate-Source Voltage

±30

310

2.48

Volts

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

P_D

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions / Part Number

MIN

800

TYP

MAX

UNIT

APT8075BN

APT8090BN

APT8075BN

APT8090BN

APT8075BN

APT8090BN

Drain-Source Breakdown Voltage

BV_DSS

Volts

(V_GS= 0V, I_D= 250 µA)

On State Drain Current

I_D(ON)

Amps

Ohms

µA

(V_DS> I_D(ON) x R_DS(ON) Max, V_GS= 10V)

0.75

0.90

250

1000

±100

Drain-Source On-State Resistance

R_DS(ON)

(V_GS= 10V, 0.5 I_D[Cont.])

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

I_GSS

V_GS(TH)

Volts

THERMAL CHARACTERISTICS

Characteristic

Symbol

MIN

TYP

MAX

0.40

UNIT

R_θJC

Junction to Case

Junction to Ambient

°C/W

R_θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 556 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

12 3 4

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与APT8075相关器件

型号	品牌	获取价格	描述	数据表
APT8075AN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 11.5A I(D) \| TO-3
APT8075BN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT8075BN-BUTT	ADPOW	获取价格	Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Met
APT8075BN-BUTT	MICROSEMI	获取价格	13A, 800V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT8075BN-GULLWING	MICROSEMI	获取价格	13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
APT8075BN-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Met
APT8075BNR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 13A I(D) \| TO-247AD
APT8075BNR-BUTT	ADPOW	获取价格	Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Met
APT8075BNR-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Met
APT8075BNR-GULLWING	MICROSEMI	获取价格	13A, 800V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN