Datasheet > APT8052BLL_04

APT8052BLL_04

更新时间： 2024-11-21 04:06:39

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	159K
描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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APT8052BLL_04 数据手册

APT8052BLL

APT8052SLL

800V 15A 0.520Ω

BLL

POWER MOS 7 MOSFET

D³PAK

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-247

SLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT8052BLL_SLL

UNIT

V_DSS

I_D

Drain-Source Voltage

800

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

±40

Watts

W/°C

298

P_D

2.38

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

800

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 7.5A)

0.52

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 640V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

µA

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

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与APT8052BLL_04相关器件

型号	品牌	获取价格	描述	数据表
APT8052HLL	ADPOW	获取价格	Power Field-Effect Transistor, 13A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Met
APT8052HLL	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
APT8052SFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT8052SLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT8052SLL	MICROSEMI	获取价格	Power Field-Effect Transistor, 15A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Met
APT-8056	AGILENT	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 8000MHz Max,
APT8056BVFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8056BVFR_04	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8056BVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT-8056R	AGILENT	获取价格	4000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

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