Datasheet > APT6030BVR_04

APT6030BVR_04

更新时间： 2024-11-25 04:32:51

品牌	Logo	应用领域
ADPOW		高压
页数	文件大小	规格书
4页	116K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT6030BVR_04 数据手册

APT6030BVR

APT6030SVR

600V 21A 0.300Ω

BVR

POWER MOS V^®MOSFET

D³PAK

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

TO-247

SVR

• Faster Switching

• Lower Leakage

• Avalanche Energy Rated

• TO-247orSurfaceMountD³PAKPackage

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

UNIT

APT6030BVR_SVR

V_DSS

I_D

Drain-Source Voltage

Volts

600

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

±40

Watts

W/°C

298

P_D

2.38

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1300

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

600

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 10.5A)

0.300

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 480V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

µA

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

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与APT6030BVR_04相关器件

型号	品牌	获取价格	描述	数据表
APT6030BVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
APT6030DN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| CHIP
APT6030HJN	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| HALF BRIDGE \| 600V V(BR)DSS \| 23A I(D)
APT6030SN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 23A I(D) \| TO-263AB
APT6030SVFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6030SVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
APT6030SVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6030SVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
APT6032AVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6033BN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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