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APT50GP60B2DQ2G PDF预览

APT50GP60B2DQ2G

更新时间: 2024-11-30 02:56:39
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制瞄准线双极性晶体管
页数 文件大小 规格书
9页 428K
描述
POWER MOS 7 IGBT

APT50GP60B2DQ2G 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:ROHS COMPLIANT, TMAX-3Reach Compliance Code:unknown
风险等级:5.58Is Samacsys:N
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):150 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):200 ns标称接通时间 (ton):55 ns
Base Number Matches:1

APT50GP60B2DQ2G 数据手册

 浏览型号APT50GP60B2DQ2G的Datasheet PDF文件第2页浏览型号APT50GP60B2DQ2G的Datasheet PDF文件第3页浏览型号APT50GP60B2DQ2G的Datasheet PDF文件第4页浏览型号APT50GP60B2DQ2G的Datasheet PDF文件第5页浏览型号APT50GP60B2DQ2G的Datasheet PDF文件第6页浏览型号APT50GP60B2DQ2G的Datasheet PDF文件第7页 
600V  
APT50GP60B2DQ2  
APT50GP60B2DQ2G*  
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
®
(B2)  
POWER MOS 7 IGBT  
T-Max®  
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch  
Through Technology this IGBT is ideal for many high frequency, high voltage switching  
applications and has been optimized for high frequency switchmode power supplies.  
• Low Conduction Loss  
• SSOA Rated  
• Low Gate Charge  
C
E
• Ultrafast Tail Current shutoff  
G
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
Symbol  
UNIT  
APT50GP60B2DQ2(G)  
VCES  
VGE  
IC1  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
600  
Volts  
±30  
150  
7
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 110°C  
IC2  
72  
Amps  
1
Pulsed Collector Current  
ICM  
190  
Switching Safe Operating Area @ TJ = 150°C  
190A @ 600V  
625  
SSOA  
PD  
Total Power Dissipation  
Watts  
°C  
Operating and Storage Junction Temperature Range  
TJ,TSTG  
-55 to 150  
300  
TL  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
Units  
V(BR)CES  
VGE(TH)  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 525µA)  
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)  
600  
3
4.5  
2.2  
2.1  
6
Volts  
2.7  
VCE(ON)  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)  
525  
ICES  
IGES  
µA  
nA  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)  
3000  
±100  
Gate-Emitter Leakage Current (VGE = ±20V)  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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