Datasheet > APT50GN60BDQ3(G)

APT50GN60BDQ3(G)

更新时间： 2024-11-30 14:14:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网栅功率控制晶体管
页数	文件大小	规格书
9页	241K
描述
Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3

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APT50GN60BDQ3(G) 技术参数

生命周期：	Active	零件包装代码：	TO-247
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.59
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	107 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：	TO-247	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e1	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	表面贴装：	NO
端子面层：	TIN SILVER COPPER	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	400 ns
标称接通时间 (ton)：	45 ns	Base Number Matches：	1

APT50GN60BDQ3(G) 数据手册

APT50GN60B_SDQ3(G)

APT50GN60SDQ3

APT50GN60BDQ3

APT50GN60BDQ3(G) APT50GN60SDQ3(G)

600V

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

(B)

low V_CE(ON)and are ideal for low frequency applications that require absolute minimum

conduction loss. Easy paralleling is a result of very tight parameter distribution and a

slightly positive V_CE(ON)temperature coefﬁcient. Low gate charge simpliﬁes gate drive

D³PAK

(S)

design and minimizes losses.

• 600V Field Stop

• Trench Gate: Low V_CE(on)

• Easy Paralleling

• 6μs Short Circuit Capability

• 175°C Rated

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

Symbol

APT50GN60B_SDQ3(G)

UNIT

V_CES

Collector-Emitter Voltage

Gate-Emitter Voltage

600

Volts

V_GE

I_C1

±30

107

Continuous Collector Current @ T_C= 25°C

I_C2

Continuous Collector Current @ T_C= 110°C

Amps

I_CM

Pulsed Collector Current

@ T_C= 175°C

150

Switching Safe Operating Area @ T_J= 175°C

150A @ 600V

366

SSOA

P_D

Total Power Dissipation

Watts

°C

T_J,T_STG

Operating and Storage Junction Temperature Range

-55 to 175

300

T_L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

600

5.0

TYP

MAX

Units

V_(BR)CES

V_GE(TH)

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 4mA)

Gate Threshold Voltage (V_CE= V_GE, I_C= 800μA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 50A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 50A, T_j= 125°C)

5.8

1.45

1.7

6.5

Volts

1.05

1.85

V_CE(ON)

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 25°C)

I_CES

μA

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 125°C)

TBD

600

I_GES

Gate-Emitter Leakage Current (V_GE= ±20V)

Intergrated Gate Resistor

R_G(int)

N/A

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7...9

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与APT50GN60BDQ3(G)相关器件

型号	品牌	获取价格	描述	数据表
APT50GN60BG	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT50GN60BG	ADPOW	获取价格	IGBT
APT50GN60S	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT50GN60SDQ2	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT50GN60SDQ2G	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT50GN60SDQ3	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, D3PAK-3
APT50GN60SDQ3(G)	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3
APT50GN60SG	MICROSEMI	获取价格	Resonant Mode Combi IGBT
APT50GP60B	ADPOW	获取价格	POWER MOS 7 IGBT
APT50GP60B2D2	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel

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