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APT50GN60BDQ2G

更新时间： 2024-11-30 08:33:27
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ADPOW 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
9页 329K
描述
IGBT

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中文翻译

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APT50GN60BDQ2G 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
风险等级：5.59Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：107 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：TO-247ADJESD-30 代码：R-PSFM-T3
JESD-609代码：e1元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：400 ns标称接通时间 (ton)：45 ns
Base Number Matches：1

APT50GN60BDQ2G 数据手册

 浏览型号APT50GN60BDQ2G的Datasheet PDF文件第2页浏览型号APT50GN60BDQ2G的Datasheet PDF文件第3页浏览型号APT50GN60BDQ2G的Datasheet PDF文件第4页浏览型号APT50GN60BDQ2G的Datasheet PDF文件第5页浏览型号APT50GN60BDQ2G的Datasheet PDF文件第6页浏览型号APT50GN60BDQ2G的Datasheet PDF文件第7页 
600V  
APT50GN60BDQ2  
APT50GN60BDQ2G*  
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra  
low VCE(ON) and are ideal for low frequency applications that require absolute minimum  
conduction loss. Easy paralleling is a result of very tight parameter distribution and a  
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive  
design and minimizes losses.  
G
C
E
• 600V Field Stop  
• Trench Gate: Low VCE(on)  
• Easy Paralleling  
• 6µs Short Circuit Capability  
• 175°C Rated  
C
E
G
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
Symbol  
APT50GN60BDQ2(G)  
UNIT  
VCES  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
600  
Volts  
VGE  
IC1  
±30  
107  
64  
8
Continuous Collector Current @ TC = 25°C  
IC2  
Continuous Collector Current @ TC = 110°C  
Amps  
1
ICM  
Pulsed Collector Current  
@ TC = 175°C  
150  
Switching Safe Operating Area @ TJ = 175°C  
150A @ 600V  
366  
SSOA  
PD  
Total Power Dissipation  
Watts  
°C  
TJ,TSTG  
Operating and Storage Junction Temperature Range  
-55 to 175  
300  
TL  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
600  
5.0  
TYP  
MAX  
Units  
V(BR)CES  
VGE(TH)  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)  
Gate Threshold Voltage (VCE = VGE, IC = 800µA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)  
5.8  
1.45  
1.7  
6.5  
Volts  
1.05  
1.85  
VCE(ON)  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)  
50  
ICES  
µA  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)  
TBD  
600  
IGES  
Gate-Emitter Leakage Current (VGE = ±20V)  
Intergrated Gate Resistor  
nA  
RG(int)  
Ω
N/A  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
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