Datasheet > APT50GLQ65JU2-Module

APT50GLQ65JU2-Module

更新时间： 2024-12-01 14:55:19

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	403K
描述
IGBT 3 fastLow voltage dropLow leakage currentLow switching lossesKelvin emitter for easy driveLow

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中文翻译

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数据手册

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APT50GLQ65JU2-Module 数据手册

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APT50GLQ65JU2

ISOTOP^®Boost chopper

High speed Trench + Field Stop IGBT4

Power Module

V_CES= 650V

I_C= 50A @ Tc = 80°C

Application

•

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

Brake switch

Features

•

High speed Trench + Field Stop IGBT 4

Low voltage drop

Low leakage current

Low switching losses

•

ISOTOP^®Package (SOT-227)

Very low stray inductance

Benefits

•

Low conduction losses

Stable temperature behavior

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

ISOTOP^®

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Voltage

650

140

±20

220

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

1 - 6

www.microsemi.com

12 3 4 5 6

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