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APT50GF60JCU2 PDF预览

APT50GF60JCU2

更新时间: 2024-11-30 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体二极管晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
6页 214K
描述
ISOTOP® Boost chopper NPT IGBT SiC chopper diode

APT50GF60JCU2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:ISOTOP包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):70 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):277 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):151 ns标称接通时间 (ton):52 ns
VCEsat-Max:2.45 VBase Number Matches:1

APT50GF60JCU2 数据手册

 浏览型号APT50GF60JCU2的Datasheet PDF文件第2页浏览型号APT50GF60JCU2的Datasheet PDF文件第3页浏览型号APT50GF60JCU2的Datasheet PDF文件第4页浏览型号APT50GF60JCU2的Datasheet PDF文件第5页浏览型号APT50GF60JCU2的Datasheet PDF文件第6页 
APT50GF60JCU2  
ISOTOP® Boost chopper  
NPT IGBT  
VCES = 600V  
IC = 50A @ Tc = 90°C  
SiC chopper diode  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
Brake switch  
K
C
Features  
Non Punch Through (NPT) Fast IGBT  
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 100 kHz  
Low leakage current  
RBSOA and SCSOA rated  
G
Chopper SiC Schottky Diode  
E
-
Zero reverse recovery  
-
-
-
Zero forward recovery  
Temperature Independent switching behavior  
Positive temperature coefficient on VF  
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
K
E
C
G
Benefits  
Outstanding performance at high frequency operation  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
ISOTOP®  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
70  
50  
230  
±20  
277  
V
TC = 25°C  
TC = 90°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 125°C  
RBSOA Reverse Bias Safe Operating Area  
100A @ 500V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
See application note APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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