APT50DL60BG

更新时间： 2024-11-30 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
4页	136K
描述
Ultrasoft Recovery Rectifi er Diode

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中文翻译

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数据手册

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APT50DL60BG 数据手册

APT50DL60B(G)

APT50DL60S(G)

600V 50A

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Ultrasoft Recovery Rectiﬁer Diode

(B)

PRODUCT APPLICATIONS

PRODUCT BENEFITS

• Soft Switching - High Q

PRODUCT FEATURES

• Ultrasoft Recovery Times (t

D³PAK

)

• Anti-Parallel Diode

-Switchmode Power Supply

• Low Noise Switching

- Reduced Ringing

• Popular TO-247 Package or

-Inverters

Surface Mount D³PAK Package

• Ultra Low Forward Voltage

• Low Leakage Current

(S)

• Applications

• Higher Reliability Systems

- Induction Heating

• Minimizes or eliminates

snubber

• Resonant Mode Circuits

-ZVS and ZCS Topologies

- Phase Shifted Bridge

1 - Cathode

2 - Anode

Back of Case -Cathode

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Symbol Characteristic / Test Conditions

Ratings

Unit

Maximum D.C. Reverse Voltage

V_R

V_RRM

V_RWM

I_F(AV)

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

600

Volts

Maximum Average Forward current (T_C= 124°C, Duty Cycle = 0.5)

RMS Forward Currrent (Square wave, 50% duty)

Non-Repetitive Forward Surge Current (T_J= 45°C, 8.3 ms)

Operating and Storage Junction Temperature Range

Lead Temperature for 10 Seconds

150

I_F(RMS)

I_FSM

Amps

°C

320

T_J, T_STG

T_L

-55 to 175

300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

Min

Typ

Max

Unit

I_F= 50A

1.25

2.0

1.6

V_F

Forward Voltage

I_F= 100A

Volts

I_F= 50A, T_J= 125°C

V_R= 600V

1.25

I_RM

C_T

Maximum Reverse Leakage Current

Junction Capacitance, V_R= 200V

μA

V_R= 600V, T_J= 125°C

250

Microsemi Website - http://www.microsemi.com

12 3 4

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