Datasheet > APT5024BVR_04

APT5024BVR_04

更新时间： 2024-11-29 06:37:27

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
4页	114K
描述
POWER MOS V

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中文翻译

获取价格

数据手册

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APT5024BVR_04 数据手册

APT5024BVR

APT5024SVR

500V 22A 0.240Ω

BVR

POWER MOS V^®

D³PAK

TO-247

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

SVR

• Faster Switching

• Lower Leakage

• Avalanche Energy Rated

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5024BVR_SVR

UNIT

V_DSS

I_D

Drain-Source Voltage

500

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

280

Watts

W/°C

P_D

2.24

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

500

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.24

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

中文翻译

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与APT5024BVR_04相关器件

型号	品牌	获取价格	描述	数据表
APT5024BVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024CLL	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
APT5024CLL	ADPOW	获取价格	Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met
APT5024SFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5024SFLL	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SFLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SLL	ADPOW	获取价格	POWER MOS 7 MOSFET
APT5024SLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SVFR	ADPOW	获取价格	暂无描述
APT5024SVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met

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