Datasheet > APT5018SFLLG

APT5018SFLLG

更新时间： 2024-11-29 03:56:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	96K
描述
Power Field-Effect Transistor, 27A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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APT5018SFLLG 数据手册

APT5018BFLL

APT5018SFLL

500V 27A 0.180Ω

BLL

POWER MOS 7 FREDFET

D³PAK

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-247

SLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5018

500

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

108

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

W/°C

300

P_D

2.4

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

500

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 13.5A)

Ohms

µA

0.180

250

Zero Gate Voltage Drain Current (V_DS= 500V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 400V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

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与APT5018SFLLG相关器件

型号	品牌	获取价格	描述	数据表
APT5018SLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5018SLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 27A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
APT5019HVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT501R1AN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 7.5A I(D) \| TO-3
APT501R1BN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 9A I(D) \| TO-247AD
APT501R1BN-BUTT	ADPOW	获取价格	Power Field-Effect Transistor, 9A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal
APT501R1BN-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 9A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal
APT501R1BNR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 9.5A I(D) \| TO-247AD
APT501R1CN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 7A I(D) \| TO-254ISO
APT501R1GN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 6.5A I(D) \| TO-257ISO

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