型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT5016BLLG | MICROSEMI |
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Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Met | |
APT5016SFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5016SFLL | MICROSEMI |
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POWER MOS 7 R FREDFET | |
APT5016SFLLG | MICROSEMI |
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Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Met | |
APT5016SLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5016SLLG | MICROSEMI |
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Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Met | |
APT5017 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT5017BFLC | ADPOW |
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Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Met | |
APT5017BLC | ADPOW |
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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement | |
APT5017BVFR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |