Datasheet > APT5014BLL_04

APT5014BLL_04

更新时间： 2024-11-28 04:32:47

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	166K
描述
POWER MOS 7 MOSFET

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中文翻译

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数据手册

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APT5014BLL_04 数据手册

APT5014BLL

APT5014SLL

500V 35A 0.140Ω

D³PAK

TO-247

POWER MOS 7 MOSFET

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5014BLL-SLL

UNIT

V_DSS

I_D

Drain-Source Voltage

500

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

140

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

±40

Watts

W/°C

403

P_D

3.22

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1300

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

500

Drain-Source On-State Resistance

(V_GS= 10V, 17.5A)

0.140

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 500V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 400V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

µA

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

中文翻译

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与APT5014BLL_04相关器件

型号	品牌	获取价格	描述	数据表
APT5014BLLG	MICROSEMI	获取价格	Power Semiconductors Power Modules RF Power MOSFETs
APT5014LFLC	ETC	获取价格
APT5014LLC	ADPOW	获取价格	Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement
APT5014LLC	MICROSEMI	获取价格	37A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264, TO-264, 3 PIN
APT5014LVFR	ADPOW	获取价格	POWER MOS V FREDFET
APT5014LVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met
APT5014LVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5014LVR	MICROSEMI	获取价格	Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met
APT5014LVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Met
APT5014SFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

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