Datasheet > APT466FL

APT466FL

更新时间： 2024-11-25 08:33:27

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
4页	187K
描述
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

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APT466FL 数据手册

ARF466FL

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE

200V 300W 45MHz

TheARF466FLisaruggedhighvoltageRFpowertransistordesignedforscientific,commercial,medicalandindustrial

RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of

operation.

•

Low Cost Flangeless RF Package.

Low Vth thermal coefficient.

•

Specified150Volt, 40.68MHzCharacteristics:

Output Power = 300 Watts.

LowThermalResistance.

Gain = 16dB (Class AB)

Efficiency = 75% (Class C)

Optimized SOA for Superior Ruggedness.

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

ARF466FL

1000

UNIT

V_DSS

V_DGO

I_D

Drain-Source Voltage

Volts

Drain-Gate Voltage

Continuous Drain Current @ T_C= 25°C

Amps

Volts

Watts

°C/W

V_GS

P_D

Gate-Source Voltage

±30

Total Power Dissipation @ T_C= 25°C

450

R_θJC

T_J,T_STG

T_L

Junction to Case

0.30

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 175

300

°C

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

ohms

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

1000

Drain-Source On-State Resistance (V_GS= 10V^,I_D= 6.5A⁾

R_DS(ON)

0.90

Zero Gate Voltage Drain Current (V_DS= 1000V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 6.5A)

I_DSS

µA

250

±100

I_GSS

g_fs

mhos

Volts

3.3

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

V_GS(TH)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

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