是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PUFM-X4 | Reach Compliance Code: | unknown |
风险等级: | 5.6 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码: | R-PUFM-X4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 230 ns |
标称接通时间 (ton): | 47 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT45GP120JDQ2 | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT45GP120JDQ2 | MICROSEMI |
获取价格 |
Power Semiconductors Power Modules | |
APT45GR65B2DU30 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 118A I(C), 650V V(BR)CES, N-Channel, TO-247AD, ROHS COM | |
APT45GR65BSCD10 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 92A I(C), 650V V(BR)CES, N-Channel, | |
APT45GR65SSCD10 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
APT45M100J | MICROSEMI |
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N-Channel MOSFET | |
APT45M100J_09 | MICROSEMI |
获取价格 |
N-Channel MOSFET | |
APT45M60BFN | ETC |
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TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 450V V(BR)DSS | 78A I(D) | |
APT45M60DN | ADPOW |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
APT46-151M25-10-PF | TDK |
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Data Line Filter, 1 Function(s), 25A, |