Datasheet > APT30SCD120B

APT30SCD120B

更新时间： 2024-11-27 14:47:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
4页	127K
描述
Rectifier Diode, Schottky, 1 Element, 99A, 1200V V(RRM),

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APT30SCD120B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.8
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.8 V	最大非重复峰值正向电流：	330 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	99 A	最大重复峰值反向电压：	1200 V
子类别：	Rectifier Diodes	表面贴装：	NO
技术：	SCHOTTKY	Base Number Matches：	1

APT30SCD120B 数据手册

APT30SCD120B

APT30SCD120S

1200V 30A

Zero Recovery Silicon Carbide Schottky Diode

PRODUCT APPLICATIONS

PRODUCT BENEFITS

PRODUCT FEATURES

• Higher Reliability Systems

• Zero Recovery Times (t

)

• Anti-Parallel Diode

-Switchmode Power Supply

-Inverters

• Minimizes or eliminates

snubber

• Popular TO-247 Package or

surface mount D³PAK package

D³PAK

• Power Factor Correction (PFC)

• Low Forward Voltage

• Low Leakage Current

1 - Cathode

2 - Anode

Back of Case -Cathode

MAXIMUM RATINGS

T = 25°C unless otherwise speciﬁed.

Symbol Characteristic / Test Conditions

Ratings

Unit

Maximum D.C. Reverse Voltage

V_R

V_RRM

V_RWM

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

1200

Volts

T_C= 25°C

I_F

Maximum D.C. Forward current

T_C= 135°C

Amps

I_FRM

I_FSM

150

330

Repetitive Peak Forward Suge Current (T_J= 45°C, t_p= 10ms, Half Sine Wave)

Non-Repetitive Forward Surge Current (T_J= 25°C, t_p= 10ms, Half Sine)

T_C= 25°C

291

P_tot

Power Dissipation

T_C= 125°C

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature for 10 Seconds

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

Min

Typ

Max

Unit

I_F= 30A T_J= 25°C

1.5

2.1

1.8

V_F

Forward Voltage

Volts

I_F= 30A, T_J= 150°C

V_R= 1200V T_J= 25°C

V_R= 1200V, T_J= 150°C

600

I_RM

Q_c

Maximum Reverse Leakage Current

μA

3000

Total Capactive Charge V_R= 800V, I_F= 30A, di/dt = -100A/μs, T_J= 25°C

Junction Capacitance V_R= 0V, T_J= 25°C, f = 1MHz

200

2100

228

C_T

Junction Capacitance V_R= 200V, T_J= 25°C, f = 1MHz

Junction Capacitance V_R= 400V, T_J= 25°C, f = 1MHz

167

Microsemi Website - http://www.microsemi.com

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