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APT2X40DC120J PDF预览

APT2X40DC120J

更新时间: 2024-11-09 21:21:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网测试二极管
页数 文件大小 规格书
4页 298K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 1200V V(RRM), Silicon Carbide, ROHS COMPLIANT, ISOTOP-4

APT2X40DC120J 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:ISOTOP包装说明:ROHS COMPLIANT, ISOTOP-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81其他特性:LOW NOISE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.8 V
JESD-30 代码:R-PUFM-X4最大非重复峰值正向电流:500 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:40 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向电流:4000 µA反向测试电压:1200 V
子类别:Other Diodes表面贴装:NO
技术:SCHOTTKY端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

APT2X40DC120J 数据手册

 浏览型号APT2X40DC120J的Datasheet PDF文件第2页浏览型号APT2X40DC120J的Datasheet PDF文件第3页浏览型号APT2X40DC120J的Datasheet PDF文件第4页 
APT2X41DC120J  
APT2X40DC120J  
ISOTOP® SiC Diode  
Power Module  
VRRM = 1200V  
IF = 40A @ TC = 100°C  
Application  
2
3
Uninterruptible Power Supply (UPS)  
Induction heating  
Welding equipment  
2
1
3
4
High speed rectifiers  
Features  
Anti-Parallel  
1
4
SiC Schottky Diode  
- Zero reverse recovery  
APT2X40DC120J  
Parallel  
- Zero forward recovery  
APT2X41DC120J  
- Temperature Independent switching behavior  
- Positive temperature coefficient on VF  
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
3
2
Benefits  
4
Outstanding performance at high frequency operation  
Low losses  
Low noise switching  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
RoHS Compliant  
1
ISOTOP  
Absolute maximum ratings (per leg)  
Symbol  
VR  
Parameter  
Maximum DC reverse Voltage  
Max ratings  
Unit  
1200  
V
VRRM  
Maximum Peak Repetitive Reverse Voltage  
Maximum Average Forward Current  
IF(AV)  
IFSM  
Duty cycle = 50% TC = 100°C  
40  
A
TC = 25°C  
Non-Repetitive Forward Surge Current  
10 µs  
500  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 4  
www.microsemi.com  

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