Datasheet > APT17N80SC3

APT17N80SC3

更新时间： 2024-09-16 04:32:47

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描述
Super Junction MOSFET

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APT17N80SC3 数据手册

APT17N80BC3

APT17N80SC3

800V 17A 0.290Ω

D³PAK

Super Junction MOSFET

TO-247

COOLMOS

Power Semiconductors

• Ultra low R_{DS ON}

(

)

• Low Miller Capacitance

• Ultra Low Gate Charge, Q_g

• Avalanche Energy Rated

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT17N80BC3_SC3

UNIT

V_DSS

I_D

Drain-Source Voltage

800

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±20

±30

208

Watts

W/°C

P_D

1.67

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Lead Temperature: 0.063" from Case for 10 Sec.

Drain-Source Voltage slope (V_DS= 640V, I_D= 17A, T_J= 125°C)

V/ns

I_AR

E_AR

E_AS

Amps

Repetitive Avalanche Current

Repetitive Avalanche Energy

0.5

Single Pulse Avalanche Energy

670

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

800

Drain-Source On-State Resistance

(V_GS= 10V, 11A)

0.25

0.5

0.29

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 150°C)

Gate-Source Leakage Current (V_GS= ±20V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

µA

250

±100

3.9

I_GSS

V_GS(th)

Volts

2.10

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

™

"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-

mark of Infineon Technologies AG"

12 3 4 5

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