Datasheet > 晶体管 > 功率场效应晶体管> APT12060LVR

APT12060LVR

更新时间： 2024-01-14 06:17:52

品牌	Logo	应用领域
ADPOW		晶体晶体管功率场效应晶体管开关脉冲高压局域网
页数	文件大小	规格书
2页	42K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT12060LVR 技术参数

生命周期：	Obsolete	零件包装代码：	TO-264AA
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.68
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	20 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	625 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

APT12060LVR 数据手册

APT12060B2VR

APT12060LVR

1200V 20A 0.600W

B2VR

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

T-MAX™

TO-264

LVR

• Identical Specifications: T-MAX™ or TO-264 Package

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT12060

1200

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

625

Watts

W/°C

P_D

5.0

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1200

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.600

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

中文翻译

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与APT12060LVR相关器件

型号	品牌	获取价格	描述	数据表
APT-12066R	AGILENT	获取价格	Wide Band Medium Power Amplifier, 6000MHz Min, 12000MHz Max,
APT12067B2FLL	ADPOW	获取价格	POWER MOS 7 FREDFET
APT12067B2FLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 18A I(D), 1200V, 0.67ohm, 1-Element, N-Channel, Silicon, Me
APT12067B2LL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT12067B2LLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 18A I(D), 1200V, 0.67ohm, 1-Element, N-Channel, Silicon, Me
APT12067JFLL	ADPOW	获取价格	POWER MOS 7 FREDFET
APT12067JLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT12067LFLL	ADPOW	获取价格	POWER MOS 7 FREDFET
APT12067LFLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 18A I(D), 1200V, 0.67ohm, 1-Element, N-Channel, Silicon, Me
APT12067LLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

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