是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.75 | Is Samacsys: | N |
其他特性: | FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE | 雪崩能效等级(Eas): | 3000 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1200 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 625 W | 最大脉冲漏极电流 (IDM): | 80 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT12060LVFR | ADPOW |
获取价格 |
POWER MOS V | |
APT12060LVFRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
APT12060LVR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT-12066R | AGILENT |
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Wide Band Medium Power Amplifier, 6000MHz Min, 12000MHz Max, | |
APT12067B2FLL | ADPOW |
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POWER MOS 7 FREDFET | |
APT12067B2FLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 1200V, 0.67ohm, 1-Element, N-Channel, Silicon, Me | |
APT12067B2LL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT12067B2LLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 1200V, 0.67ohm, 1-Element, N-Channel, Silicon, Me | |
APT12067JFLL | ADPOW |
获取价格 |
POWER MOS 7 FREDFET | |
APT12067JLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |