是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
风险等级: | 5.7 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1210 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1200 V | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 1.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT1201R6SVR | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
APT12031JFLL | ADPOW |
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POWER MOS 7 FREDFET | |
APT12031JLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT12040JFLL | ADPOW |
获取价格 |
POWER MOS 7 FREDFET | |
APT12040JLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT12040JVFR | ADPOW |
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POWER MOS V FREDFET | |
APT12040JVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs | |
APT12040L2FLL | ADPOW |
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POWER MOS 7 FREDFET | |
APT12040L2FLLG | MICROSEMI |
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Power Field-Effect Transistor, 30A I(D), 1200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
APT12040L2LL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |