生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.63 | 其他特性: | FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE |
雪崩能效等级(Eas): | 3000 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.009 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 400 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT10M09LVFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M09LVFRG | MICROSEMI |
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Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, M | |
APT10M09LVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M11B2VFR | ADPOW |
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High Voltage N-Channel enhancement mode power MOSFET | |
APT10M11B2VFRG | MICROSEMI |
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Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, M | |
APT10M11B2VR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M11JVFR | ADPOW |
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High Voltage N-Channel enhancement mode power MOSFET | |
APT10M11JVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10M11JVR | MICROSEMI |
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Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | |
APT10M11JVRU2 | ADPOW |
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ISOTOP Boost chopper MOSFET Power Module |