型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT1002RCN | ADPOW |
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N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT1002RDN | ADPOW |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
APT10030L2VFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10030L2VFR_04 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10030L2VFRG | MICROSEMI |
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Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Met | |
APT10030L2VR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10030L2VR_04 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10030L2VRG | MICROSEMI |
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Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Met | |
APT10035B2FLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT10035B2FLL | MICROSEMI |
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Power MOS 7is a new generation of low loss, high voltage, N-Channel |