Datasheet > APT10026RKVR

APT10026RKVR

更新时间： 2024-11-04 23:30:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	35K
描述
Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps\|MOSFETs

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APT10026RKVR 数据手册

APT10026RKVR

1000V 0.48A 26.0W

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

TO-220

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular TO-220 Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10026RKVR

1000

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

0.48

Amps

Volts

I_DM

Pulsed Drain Current

1.92

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

W/°C

P_D

.25

T_J,T_STG

T_L

-55 to 150

300

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

TBD

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

TBD

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

TBD

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

1000

0.48

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

26.0

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

中文翻译

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与APT10026RKVR相关器件

型号	品牌	获取价格	描述	数据表
APT1002R4AN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 5.5A I(D) \| TO-3
APT1002R4BN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT1002R4BN-BUTT	MICROSEMI	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
APT1002R4BN-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
APT1002R4BNR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 6.5A I(D) \| TO-247AD
APT1002R4BNR-BUTT	ADPOW	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
APT1002R4BNR-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
APT1002R4CN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 5A I(D) \| TO-254ISO
APT1002RAN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 6A I(D) \| TO-3
APT1002RBN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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