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APT10026L2LL

更新时间： 2024-11-04 22:05:47

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
2页	68K
描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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APT10026L2LL 数据手册

APT10026L2LL

1000V 38A 0.260W

POWER MOS 7

Power MOS 7^TMis a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^TMby significantly lowering R_DS(ON)

and Q_g. Power MOS 7^TMcombines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-264

Max

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg

MAXIMUM RATINGS

• Popular TO-264 MAX Package

All Ratings: T = 25°C unless otherwise specified.

APT10026L2LL

UNIT

Symbol Parameter

V_DSS

I_D

Drain-Source Voltage

Volts

1000

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

152

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

890

Watts

W/°C

P_D

7.12

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3200

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

1000

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.260

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 5mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

中文翻译

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与APT10026L2LL相关器件

型号	品牌	获取价格	描述	数据表
APT10026L2LL_03	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10026L2LLG	MICROSEMI	获取价格	Power MOS 7 is a new generation of low loss, high voltage, N-Channel
APT10026RKVR	ETC	获取价格	Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps\|MOSFETs
APT1002R4AN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 5.5A I(D) \| TO-3
APT1002R4BN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT1002R4BN-BUTT	MICROSEMI	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
APT1002R4BN-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
APT1002R4BNR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 6.5A I(D) \| TO-247AD
APT1002R4BNR-BUTT	ADPOW	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me
APT1002R4BNR-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Me

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