APT10026JN

更新时间： 2024-11-04 22:05:47

品牌	Logo	应用领域
ADPOW		高压高电压电源
页数	文件大小	规格书
4页	67K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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中文翻译

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数据手册

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APT10026JN 数据手册

SOT-227

APT10026JN 1000V 33A 0.26Ω

ISOTOP^®

"UL Recognized" File No. E145592 (S)

POWER MOS IV^®

SINGLE DIE ISOTOP^®PACKAGE

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

APT

Symbol Parameter

10026JN

1000

UNIT

V_DSS

Volts

Drain-Source Voltage

I_D

Continuous Drain Current @ T_C= 25°C

Amps

I_DM, l_LM

V_GS

132

Pulsed Drain Current

and Inductive Current Clamped

Gate-Source Voltage

±30

690

5.52

Volts

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

P_D

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions / Part Number

Symbol

MIN

TYP

MAX

UNIT

APT10026JN

1000

Drain-Source Breakdown Voltage

BV_DSS

Volts

(V_GS= 0V, I_D= 250 µA)

On State Drain Current

I_D(ON)

Amps

Ohms

µA

(V_DS> I_D(ON) x R_DS(ON) Max, V_GS= 10V)

0.26

Drain-Source On-State Resistance

R_DS(ON)

(V_GS= 10V, 0.5 I_D[Cont.])

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

250

1000

±100

I_DSS

I_GSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

V_GS(TH) Gate Threshold Voltage (V_DS= V_GS, I_D= 5.0mA)

THERMAL CHARACTERISTICS

Volts

Symbol Characteristic

MIN

TYP

MAX

UNIT

R_ΘJC

R_ΘCS

Junction to Case

0.18

°C/W

Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

0.05

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

12 3 4

中文翻译

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与APT10026JN相关器件

型号	品牌	获取价格	描述	数据表
APT10026JNR	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 1KV V(BR)DSS \| 33A I(D)
APT10026L2FLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10026L2FLL_03	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10026L2LL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10026L2LL	MICROSEMI	获取价格	Power MOS 7 is a new generation of low loss, high voltage, N-Channel
APT10026L2LL_03	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10026L2LLG	MICROSEMI	获取价格	Power MOS 7 is a new generation of low loss, high voltage, N-Channel
APT10026RKVR	ETC	获取价格	Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps\|MOSFETs
APT1002R4AN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 5.5A I(D) \| TO-3
APT1002R4BN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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