是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 9.5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 230 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
APT1001RBLC | ADPOW | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo |
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APT1001RBN | ADPOW | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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APT1001RBN-BUTT | MICROSEMI | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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APT1001RBN-GULLWING | ADPOW | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal |
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APT1001RBN-GULLWING | MICROSEMI | 11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
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APT1001RBNR | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD |
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